SOFICS SHORT FF-FDSOI LEAKAGE

Various FinFET and FDSOI applications require a leakage consumption of (power) clamps that is much lower than the standard PDK ESD solutions. In this short movie we benchmark Sofics solutions versus the PDK for 2kV HBM power clamps. Data is presented for 3 generations of FinFET and one FDSOI process. Leakage measurements, both a room temperature and elevated (125°C) temperature, show an improvement of 2..3 orders of magnitude.

Тэги:

#On-chip_ESD_protection #ESD_protection #Electrostatic_Discharge #ESD #TSMC #Sofics #IC_design #Semiconductor #Chip_design #FinFET #N16 #N12 #N7 #N5 #16nm #12nm #7nm #5nm #IC_design_complexity #EUV #Nanometer_IC_design #Increase_IC_robustness #Improve_IC_performance #Reduce_IC_cost #Reliability #Silicon_proven #Fabless_IC_design #FDSOI #Ultra-Low_Leakage

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